2N2222 Transistor Description

The 2N2222 is a widely used NPN bipolar junction transistor designed for general purpose low power amplifying or switching applications. It is known for its reliability, fast switching speed, and good gain characteristics.

Features / Specifications:

• Transistor Type: BJTs – Bipolar Junction Transistors
• Transistor Polarity: NPN
• Collector-Emitter Voltage (V_CEO) Max: 40 V
• Collector-Base Voltage (V_CBO): 75 V
• Emitter-Base Voltage (V_EBO): 6 V
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.0 V (typical)
• Maximum DC Collector Current (I_C): 600 mA
• Power Dissipation (P_D): 625 mW (depends on package and cooling)
• Maximum Operating Temperature: +150°C
• Mounting Style: Through Hole
• Package / Case: TO-18 metal can or TO-92 plastic package

Applications:

• Switching and amplification of low power signals
• Switching loads under 800 mA
• Battery-powered circuits
• Driver stages for relays and LEDs
• General purpose amplifier and switching applications

For detailed technical information, please refer to the official datasheet available here .