IRF1010E MOSFET Description

The IRF1010E is a high speed power MOSFET designed for switching applications and power amplification. It is commonly used in power supplies, motor drivers, and audio amplifier circuits where efficient switching and low conduction losses are required.

Features / Specifications:

• Transistor Type: MOSFET (N-Channel)
• Drain-Source Voltage (Vds) Max: 60 V
• Max Drain Current (Id): 83 A
• Gate Threshold Voltage (Vgs(th)): 2 to 4 V
• Max Gate-to-Source Voltage Vgs:20V
• Rds(on) Max: 0.045 Ohm @ Vgs = 10 V
• Power Dissipation (Pd): 170 W
• Operating Temperature Range: -55°C to 175°C
• Package: TO-220

Applications:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Control Circuits
• Audio Amplifiers
• Pulse Width Modulation (PWM) Systems

For detailed technical information, you can view the official datasheet of the IRF1010E from the manufacturer here:
IRF1010E Datasheet